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parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.4 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.5 a i dm pulsed drain current -20 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 0.016 w/c e as single pulse avalanche energy 31 mj v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 08/31/05 parameter max. units r ja maximum junction-to-ambient 62.5 c/w thermal resistance
www.irf.com 1 si3443dvpbf hexfet power mosfet these p-channel mosfets from international rectifierutilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the tsop-6 package with its customized leadframe produces a hexfet power mosfet with r ds(on) 60% less than a similar size sot-23. this package is ideal forapplications where printed circuit board space is at a premium. it's unique thermal design and r ds(on) reduction enables a current-handling increase of nearly 300%compared to the sot-23. v dss = -20v r ds(on) = 0.065 ? description ultra low on-resistance p-channel mosfet surface mount available in tape & reel -2.5v rated lead-free top view 1 2 d g a d dd s 3 4 5 6 tsop-6 pd-95240 downloaded from: http:///
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.7a, v gs = 0v t rr reverse recovery time CCC 51 77 ns t j = 25c, i f = -1.7a q rr reverse recovery charge CCC 30 44 nc di/dt = -100a/s source-drain ratings and characteristics 20 2.0 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle surface mounted on fr-4 board, t
starting t j = 25c, l = 6.8mh r g = 25 ? , i as = -3.0a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.005 CCC v/c reference to 25c, i d = -1ma CCC 0.034 0.065 v gs = -4.5v, i d = -4.4a CCC 0.053 0.090 ? v gs = -2.7v, i d = -3.7a CCC 0.060 0.100 v gs = -2.5v, i d = -3.5a v gs(th) gate threshold voltage -0.60 CCC -1.2 v v ds = v gs , i d = -250a g fs forward transconductance CCC 12 CCC s v ds = -10v, i d = -4.4 a CCC CCC -1.0 a v ds = -20v, v gs = 0v CCC CCC -5.0 v ds = -20v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 na v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 11 15 i d = -4.4a q gs gate-to-source charge CCC 2.2 CCC nc v ds = -10v q gd gate-to-drain ("miller") charge CCC 2.9 CCC v gs = -4.5v t d(on) turn-on delay time CCC 12 50 v dd = -10v, v gs = -4.5v t r rise time CCC 33 60 ns i d = -1.0a t d(off) turn-off delay time CCC 70 100 r g = 6.0 ? t f fall time CCC 72 100 r d = 10 ?, c iss input capacitance CCC 1079 CCC v gs = 0v c oss output capacitance CCC 220 CCC pf v ds = -10v c rss reverse transfer capacitance CCC 152 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current downloaded from: http:///
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -5.6a 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.50v -5.00v -4.00v -3.50v -3.00v -2.50v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.50v -5.00v -4.00v -3.50v -3.00v -2.50v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j downloaded from: http:///
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 0 3 6 9 12 15 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.5a v = -10v ds 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 0 400 800 1200 1600 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.3a -2.4a -3.0a 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d downloaded from: http:///
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w = (1-26) if prece de d by las t digit of calendar year w = (27-52) if preceded by a letter code top part number w = we e k y = year lot f = irf5801 (as shown here) indicates lead-free. note: a l i ne above the wor k week a = s i3443dv b = irf 5800 i = irf 5805 d = ir f 5851 e = irf 5852 k = irf 5810 c = i r f 5 8 5 0 n = irf 5802 m = irf 5803 part number code reference: l = irf5804 j = irf 5806 8 2008 2 2002 02 ye ar 2001 y1 wor k 01 we e k 5 2005 2003 2004 34 2006 2007 67 04 03 b wa c d c c 2003 29 2009 2010 90 25 2426 y ye ar 2001 2002 ab we e k wor k 28 27 y xz w a b j 2009 f 2006 2004 2005 de 2007 2008 gh 30 2010 k 51 50 dx y dat e code downloaded from: http:///
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data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/05 downloaded from: http:///

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